Introduction

This document is intended as supplementary material to HFSS for beginners and advanced users. It includes instructions to create, simulate, and analyze a silicon spiral inductor model.

This chapter contains the following topic:

• Sample Project - Silicon Spiral Inductor

Sample Project – Silicon Spiral Inductor

In this project, we will use HFSS to create, analyze, and review the results of a 2.5 turn spiral inductor.

Figure 1-1: Spiral Inductor

This nominal design consists of the following components with their corresponding dimensions and material properties:

• Dielectric Layers: For all, Depth (XSize) = 540 μm, Width (YSize) = 540 μm
• Passivation: Thickness (ZSize) = 0.7 μm, ε_r = 7.9
• Oxide: Thickness = 9.8um, ε_r = 4.0
• Substrate: Thickness = 300 μm, ε_r = 11.9, σ = 10 S/m

where ε_r is the relative permittivity, and σ is the bulk conductivity of the material.

• Conductors:
• Spiral (M6): Thickness = 2 μm, Trace Width =15 μm, Trace Spacing =1.5 μm, Inside Radius =60 μm, σ =2.8e7 S/m
• Underpass (M5): Thickness = 0.5 μm, Trace Width =15 μm, σ = 2.8e7 S/m

 



Figure 1-2: Passivation, Oxide and Substrate